| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a NAND-type flash memory for suppressing variations in a threshold of a selection transistor in a write operation of the NAND-type flash memory. <P>SOLUTION: In the write operation of the NAND-type flash memory, a row decoder applies a first voltage lower than a voltage applied to a control gate of other memory cells of a NAND string to a control gate of a first memory cell adjacent to a drain side selection gate transistor in NAND strings to cut off an area between the other memory cells of the NAND strings and the drain side selection gate transistor. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
