发明名称 |
Semiconductor device with increased channel length and method for fabricating the same |
摘要 |
A semiconductor device with an increased channel length and a method for fabricating the same are provided. The semiconductor device includes: a substrate with an active region including a planar active region and a prominence active region formed on the planar active region; a gate insulation layer formed over the active region; and a gate structure including at least one gate lining layer encompassing the prominence active region on the gate insulation layer.
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申请公布号 |
US8026557(B2) |
申请公布日期 |
2011.09.27 |
申请号 |
US20080287805 |
申请日期 |
2008.10.14 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
JUNG JIN-KI |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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