| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that the etching of a stopper film does not proceed in etching a bottom of a hole after the etching of a Low-K film in a dual damascene-structure Via-process in a conventional technology. SOLUTION: A method of making a via of a dual damascene process in the dual damascene process for plasma etching includes a first step of etching an anti-reflection film using a via-patterned upper layer resist film as a mask, a second step of etching a lower layer resist film using the upper layer resist film and the anti-reflection film as masks, a third step of etching the Low-K film using the lower layer resist film as the mask, a fourth step of performing plasma treatment before etching the stopper film, and a fifth step of etching the stopper film. COPYRIGHT: (C)2011,JPO&INPIT |
