| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method suppressing film thinning of an STI (Shallow Trench Isolation) film by etching in a manufacturing process of a flash memory, and to provide a split gate type MONOS (Metal-Oxide-Nitride-Oxide-Silicon) type flash memory structure attaining it. SOLUTION: The manufacturing method of the split gate type MONOS type flash memory including a word gate and a control gate includes the step of forming the word gates with an oxide film nipped on an impurity diffusion layer of a semiconductor substrate separated by STI, the step of forming an ONO (SiO<SB>2</SB>/SiN/SiO<SB>2</SB>) layer with an oxide film, a nitride film, an oxide film deposited in this order on the entire surface of the semiconductor substrate with the STI and the word gates formed, the step of forming a conductive film (10) for the control gate on the ONO layer, and the step of forming an insulating film (26) for a mask on the entire surface of the conductive film for the control gate. COPYRIGHT: (C)2011,JPO&INPIT
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