POWER SEMICONDUCTOR MODULE, ELECTRIC POWER CONVERTER, AND RAILWAY VEHICLE

摘要

Disclosed is a power semiconductor module which comprises: an element pair (26) wherein an IGBT (25) is connected in inverse parallel with an FWD group (24) wherein an FWD (24a) the voltage drop characteristics of which have a negative temperature coefficient when an electric current is passed therethrough and an FWD (24b) the voltage drop characteristics of which have a positive temperature coefficient when an electric current is passed therethrough are connected in series with each other; and an element pair (36) wherein an IGBT (35) is connected in inverse parallel with an FWD group (34) wherein an FWD (34a) the voltage drop characteristics of which have a negative temperature coefficient when an electric current is passed therethrough and an FWD (34b) the voltage drop characteristics of which have a positive temperature coefficient when an electric current is passed therethrough are connected in series with each other. The power semiconductor module is configured such that the element pairs (26, 36) are connected in parallel with each other.