| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for forming a resist underlay film from which a resist underlay film having superior etching resistance and a reduced reflectance can be formed, and to provide a method for forming a pattern. <P>SOLUTION: The composition for forming a resist underlay film contains a polymer having a repeating unit represented by the formula shown. In the formula, R<SP>1</SP>represents a hydroxyl group, 1-6C alkyl group, 1-6C alkoxy group, 2-10C alkoxycarbonyl group, or 6-14C aryl group; n represents an integer of 0 to 5. Hhowever, when n is 2 to 5, a plurality of R<SP>1</SP>may be identical or different from one another; X represents a 1-20C divalent hydrocarbon group, 6-14C arylene group or 1-20C alkane diyloxy group; m represents an integer of 1 to 7. When m is 2 to 7, a plurality of X may be identical or different from one another, where n+m is an integer of 1 to 7; R<SP>2</SP>represents a single bond or a 1-4C straight-chain or branched alkane diyl group; R<SP>3</SP>represents a 4-20C cyclic alkyl or a 6-30C aryl group, which may have one or more groups in a hydroxyl group, 1-6C alkyl group, alkoxy group, acyl group and hydroxyalkyl group. <P>COPYRIGHT: (C)2011,JPO&INPIT |
