发明名称 Method Of Sensing Magnitude Of Current Through Semiconductor Power Device
摘要 A cascode current sensor includes a main MOSFET and a sense MOSFET. The drain terminal of the main MOSFET is connected to a power device whose current is to be monitored, and the source and gate terminals of the main MOSFET are connected to the source and gate terminals, respectively, of the sense MOSFET. The drain voltages of the main and sense MOSFETs are equalized, in one embodiment by using a variable current source and negative feedback. The gate width of the main MOSFET is typically larger than the gate width of the sense MOSFET. Using the size ratio of the gate widths, the current in the main MOSFET is measured by sensing the magnitude of the current in the sense MOSFET. Inserting the relatively large MOSFET in the power circuit minimizes power loss.
申请公布号 US2011221421(A1) 申请公布日期 2011.09.15
申请号 US201113113791 申请日期 2011.05.23
申请人 发明人 WILLIAMS RICHARD K.
分类号 G01R19/00 主分类号 G01R19/00
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