| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing variations in characteristics of an MOS transistor in which stress is applied on channels. SOLUTION: A manufacturing method of a semiconductor device includes the steps of: forming a gate insulating film on a semiconductor substrate 10, forming a gate electrode 14c on the gate insulating film, forming side walls 15a, 15b on the sides of the gate electrode 14c, forming, after forming the side walls 15a, 15b, holes 10a, 10b in the semiconductor substrate 10 next to the gate electrode 14c using an organic alkali solution or TMAH as an etchant solution and forming source/drain material layers 18a, 18b in the holes 10a, 10b. COPYRIGHT: (C)2011,JPO&INPIT |
