| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element wherein the single lateral mode oscillation can be obtained easily while reducing contact resistance of a semiconductor layer and a contact electrode, and controlling heating. SOLUTION: The semiconductor laser element includes a semiconductor lamination part having at least an n-type semiconductor layer and a p-type semiconductor layer, a first insulating part provided on either the n-type semiconductor layer and/or the p-type semiconductor layer and has a first opening, and a contact electrode provided continuously on the first insulating part and the semiconductor layer in the first opening and connected electrically with the semiconductor layer in the first opening. More specifically, the contact electrode has a second insulating part which is provided, on the inside of the first opening, with a second opening smaller than the first opening, and is separated by the second insulating part to the side close to the semiconductor layer and the side remote from the semiconductor layer on the inside of the first opening and on the outside of the second opening. COPYRIGHT: (C)2011,JPO&INPIT |
