发明名称
摘要 PROBLEM TO BE SOLVED: To provide a new device using a new carbon structure having a nano scale, and to provide a carbon nano wall and a manufacturing method of the carbon nano wall. SOLUTION: In the device, a conductive region is formed with the carbon nano wall as a substrate. The carbon nano wall can comprise a hetero atom or does not comprise the hetero atom. In the carbon nano wall comprising the hetero atom, material gas comprising the hetero atom and a carbon source can be manufactured by a plasma CVD method. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP4766895(B2) 申请公布日期 2011.09.07
申请号 JP20050093311 申请日期 2005.03.28
申请人 发明人
分类号 H01L29/06;B82B1/00;B82B3/00;C01B31/02;H01L21/205;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H01L29/66;H01L29/78;H01L29/786;H01L29/80 主分类号 H01L29/06
代理机构 代理人
主权项
地址