发明名称 CONNECTION MATERIAL, METHOD FOR PRODUCING THE SAME, AND SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a connection material in which the joining temperature of a Zn/Al clad material is reduced, thus residual thermal stress in a using temperature region is reduced, and reliability of the joint can be improved. <P>SOLUTION: The connection material is composed of: an Mg-containing Al-based alloy layer 2; and Zn layers 3, 4 adjacent to both the sides of the Al based alloy layer 2. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011167713(A) 申请公布日期 2011.09.01
申请号 JP20100032840 申请日期 2010.02.17
申请人 HITACHI CABLE LTD 发明人 KUROKI KAZUMA;KURODA HIROMITSU;TONG CHINGPING
分类号 B23K35/14;B23K1/00;B23K35/22;B23K35/28;B23K35/40;B23K101/40;C22C21/00;H01L21/52;H01L21/60;H01L23/02 主分类号 B23K35/14
代理机构 代理人
主权项
地址