发明名称 |
CONNECTION MATERIAL, METHOD FOR PRODUCING THE SAME, AND SEMICONDUCTOR DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a connection material in which the joining temperature of a Zn/Al clad material is reduced, thus residual thermal stress in a using temperature region is reduced, and reliability of the joint can be improved. <P>SOLUTION: The connection material is composed of: an Mg-containing Al-based alloy layer 2; and Zn layers 3, 4 adjacent to both the sides of the Al based alloy layer 2. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011167713(A) |
申请公布日期 |
2011.09.01 |
申请号 |
JP20100032840 |
申请日期 |
2010.02.17 |
申请人 |
HITACHI CABLE LTD |
发明人 |
KUROKI KAZUMA;KURODA HIROMITSU;TONG CHINGPING |
分类号 |
B23K35/14;B23K1/00;B23K35/22;B23K35/28;B23K35/40;B23K101/40;C22C21/00;H01L21/52;H01L21/60;H01L23/02 |
主分类号 |
B23K35/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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