发明名称 MEMORY DEVICE WITH PSEUDO DOUBLE CLOCK SIGNALS AND THE METHOD USING THE SAME
摘要 A method for operating a memory device with pseudo double clock signals comprises the steps of: generating an even clock signal and an odd clock signal, wherein the clock rates of both the even clock signal and the odd clock signal are half that of the input clock signal, and the even clock signal is the inverse signal of the odd clock signal; if the logic level of the even clock signal is 1 when receiving a trigger of a control signal, applying the even clock signal to a memory device; and if the logic level of the odd clock signal is 1 when receiving another trigger of the control signal, applying the odd clock signal to the memory device.
申请公布号 US2011211417(A1) 申请公布日期 2011.09.01
申请号 US20100713561 申请日期 2010.02.26
申请人 ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. 发明人 CHOU MIN CHUNG
分类号 G11C8/18 主分类号 G11C8/18
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