| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting apparatus having reduced breakdown voltage Vr variation among lots while having high luminous efficiency and a high breakdown voltage Vr, and to provide a method of manufacturing the semiconductor light emitting apparatus. <P>SOLUTION: The semiconductor light emitting apparatus includes: a first clad layer; a second clad layer having an average dopant concentration lower than that of the first clad layer; an active layer having an average dopant concentration of 2×10<SP>16</SP>cm<SP>-3</SP>to 4×10<SP>16</SP>cm<SP>-3</SP>and made of (Al<SB>y</SB>Ga<SB>1-y</SB>)<SB>x</SB>In<SB>1-x</SB>P(0<x≤1, 0≤y≤1); a third clad layer; and a second conductivity type semiconductor layer made of Ga<SB>1-x</SB>In<SB>x</SB>P (0≤x<1). In the semiconductor light emitting apparatus, a relational expression of d≥1.2×N<SB>d1</SB>×10<SP>-15</SP>+150 is satisfied, wherein d (nm) represents a layer thickness of the second clad layer and N<SB>d1</SB>(cm<SP>-3</SP>) represents the average dopant concentration of the second clad layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
