摘要 |
PROBLEM TO BE SOLVED: To minimize an influence of variations in manufacturing to obtain high frequency characteristics of a lamb wave device at a high yield even in mass production. SOLUTION: A lamb wave resonator 1 includes an IDT electrode 20 constituted of a plurality of electrode fingers intercalarily formed on one main surface of a piezoelectric substrate, and a pair of reflectors 25, 26 which are arranged at both sides the IDT electrode 20 in a lamb wave propagation direction. When a wavelength of the lamb wave to be oscillated is defined asλ, the thickness t of the piezoelectric substrate is included in a range expressed by 0<t/λ≤3. A relation between a reference valueη0 of a metallization ratioηexpressed by W/(λ/2)=ηwhen the width of the electrode finger of the IDT electrode is W, and H/λobtained by standardizing the electrode film thickness H of the IDT electrode by the wavelengthλsatisfiesη0=-60416.6667(H/λ)<SP>4</SP>+8208.3333(H/λ)<SP>3</SP>-413.9583(H/λ)<SP>2</SP>+9.7292(H/λ)+0.4900. COPYRIGHT: (C)2011,JPO&INPIT
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