发明名称 Micromachine device with a spatial portion formed within
摘要 A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.
申请公布号 US8008735(B2) 申请公布日期 2011.08.30
申请号 US20070684711 申请日期 2007.03.12
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAGUCHI MAYUMI;IZUMI KONAMI
分类号 H01L29/82 主分类号 H01L29/82
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