| 摘要 |
<P>PROBLEM TO BE SOLVED: To mount a high-speed photodiode and a capacitance in an integrated form on one chip without deteriorating the characteristics of the high-speed photodiode. <P>SOLUTION: An integrated element includes a high-speed photodiode element formed on a substrate, an MIM (Metal Insulation Metal) capacitance formed on a layer different from a layer having the high-speed photodiode element, an organic coating film functioning as an insulating film for the high-speed photodiode and an insulating film serving as an underlayer for the MIM capacitance. The organic coating film is provided as a polyimide film. <P>COPYRIGHT: (C)2011,JPO&INPIT |
