SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a fabricating method thereof are provided to prevent the corrosion of a copper wire and reduce binding errors by forming a reactive metal layer using a reaction between the copper wire and a low melting point metal layer. CONSTITUTION: A low melting point metal layer formed with a low melting point metal having a melting point below 1000 degrees centigrade is formed on entire surfaces of a copper wire(3) and an insulating layer(2) of a semiconductor substrate(1). A reactive metal layer(5) is formed on a boundary between the low melting point metal layer and the copper wire(3) by reacting the low melting point metal layer with the copper wire in a heat treatment process. The remaining reactive metal layer(5) except for the reactive metal layer within a via hole is removed by performing CMP. A protective layer(6) is formed on the insulating layer(2) and the reactive metal layer. A pad(200) for exposing the reactive metal layer is formed by etching a part of the protective layer.