发明名称 |
Methods for forming a plurality of contact holes in a microelectric device |
摘要 |
A method including: forming a dielectric layer over a substrate of a microelectronic device; forming a photoresist layer over the dielectric layer; performing a first exposure of the photoresist layer to permit portions of the dielectric layer to be removed at a first plurality of locations; subsequent to performing the first exposure, performing a second exposure of the photoresist layer to permit portions of the dielectric layer to be removed at a second plurality of locations different from the first plurality of locations; removing the portions of the dielectric layer at each of i) the first plurality of locations and ii) the second plurality of locations; and etching the dielectric layer at each of i) the first plurality of locations and ii) the second plurality of locations to respectively form a contact hole at each of the i) the first plurality of locations and ii) the second plurality of locations.
|
申请公布号 |
US8003523(B1) |
申请公布日期 |
2011.08.23 |
申请号 |
US20100767626 |
申请日期 |
2010.04.26 |
申请人 |
MARVELL INTERNATIONAL LTD. |
发明人 |
WU ALBERT;WEI CHIEN-CHUAN |
分类号 |
H01L21/475 |
主分类号 |
H01L21/475 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|