发明名称 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF
摘要 <p>A semiconductor device including photosensor capable of imaging with high resolution is disclosed. The semiconductor device includes the photosensor having a photodiode, a first transistor, and a second transistor. The photodiode generates an electric signal in accordance with the intensity of light. The first transistor stores charge in a gate thereof and converts the stored charge into an output signal. The second transistor transfers the electric signal generated by the photodiode to the gate of the first transistor and holds the charge stored in the gate of the first transistor. The first transistor has a back gate and the threshold voltage thereof is changed by changing the potential of the back gate.</p>
申请公布号 WO2011099336(A1) 申请公布日期 2011.08.18
申请号 WO2011JP50793 申请日期 2011.01.12
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KUROKAWA, YOSHIYUKI 发明人 KUROKAWA, YOSHIYUKI
分类号 H01L27/146;H01L29/786;H04N5/353;H04N5/355;H04N5/374 主分类号 H01L27/146
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