SEMICONDUCTOR DEVICE WITH HAVE DEEP TRENCH WITHOUT CRITICAL DIMENSION DIFFERENCE BETWEEN TOP AND BOTTOM AREA AND METHOD FOR MANUFACTURING SAME

摘要

PURPOSE: A semiconductor which has a trench without a CD difference between the top and bottom of the semiconductor and a manufacturing method thereof are provided to form a capacitor electrode of a fixed CD on the top and the bottom of the semiconductor, thereby obtaining a DRAM cell with superior electrical features. CONSTITUTION: A trench(130) is filled with an organic material polymer. An etching gas is supplied to the trench. The etching gas includes an H-F group in the organic material polymer. The organic material polymer is reacted with the H-F group to generate a wet etchant. The sidewall of the trench is selectively etched. The trench of a fixed CD is formed on the top and the bottom of the semiconductor by eliminating the organic material polymer.