| 摘要 |
<p>A method of manufacturing a semiconductor device is disclosed, which includes at least the steps of preparing a laminated structure including a single chip or a plurality of chips, and dividing the laminated structure into a plurality of sub-laminated structures. A laminated structure comprised of a silicon substrate and a single chip or a plurality of chips laminated on the silicon substrate is formed. Then, the laminated structure is divided into a plurality of sub-laminated structures. Each of the sub-laminated structures includes a semiconductor device.</p> |
