发明名称 |
Method of forming metal ion transistor |
摘要 |
A method of forming a metal ion transistor comprises forming a first electrode in a first isolation layer; forming a second isolation layer over the first isolation layer; forming a first cell region of a low dielectric constant (low-k) dielectric over the first electrode in the second isolation layer, the first cell region isolated from the second isolation layer; forming a cap layer over the second isolation layer and the first cell region, at least thinning the cap layer over the first cell region; depositing a layer of the low-k dielectric over the second isolation layer and the first cell region; forming metal ions in the low-k dielectric layer; patterning the low-k dielectric layer to form a second cell region; sealing the second cell region using a liner; and forming a second electrode contacting the second cell region and a third electrode contacting the second cell region.
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申请公布号 |
US7998828(B2) |
申请公布日期 |
2011.08.16 |
申请号 |
US20100725817 |
申请日期 |
2010.03.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES NORTH AMERICA |
发明人 |
CHEN FEN;FISCHER ARMIN |
分类号 |
H01L21/34;H01L21/00;H01L21/20;H01L21/335;H01L21/339;H01L21/36;H01L21/76;H01L21/8232;H01L21/84;H01L27/148;H01L29/12;H01L51/40 |
主分类号 |
H01L21/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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