<p>Methods and means related to memory resistors are provided. A memristor includes two multi-layer electrodes and an active material layer. One multi-layer electrode forms an Ohmic contact region with the active material layer. The other multi-layer electrode forms a Schottky barrier layer with the active material layer. The active material layer is subject to oxygen vacancy profile reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.</p>
申请公布号
WO2011096940(A1)
申请公布日期
2011.08.11
申请号
WO2010US23492
申请日期
2010.02.08
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;YANG, JIANHUA;WU, WEI;RIBEIRO, GILBERTO