SEMICONDUCTOR DEVICE

摘要

Disclosed is a semiconductor device wherein fluctuation of the GND potential of a control substrate is suppressed without limiting the direction of mounting an IC on the control substrate, and malfunction of the IC can be eliminated. In the power module (10) as the semiconductor device, an insulating substrate (31), which has a power switching element (24) provided thereon, and the control substrate (22), which is provided with the IC (50) that controls the power switching element (24), are provided one over another in a case body (19). On both the sides of the IC (50), GND pins (61) are provided, and the control substrate (22) is provided with the GND pattern (51) having the GND pins (61) of the IC (50) connected thereto. A GND loop disconnecting slit (70), as a disconnecting section that disconnects a GND loop, is provided in the GND pattern (51), said GND pattern being formed by electrically connecting the IC (50), the GND pins (61) on both the sides of the IC (50), and the GND pattern (51).