发明名称 Improvements relating to the forming of p-n junctions
摘要 <p>816,170. Junction rectifiers. COMPAGNIE FRANCAISE THOMSON-HOUSTON. Oct. 17,1957 [Oct. 19, 1956], No. 32479/57. Class 37. A small P-N junction 6 is made by placing the point of a tapered. aluminium wire in contact with an N-type semiconductor element and passing a current impulse through the wire and element to heat them in the region of the point contact sufficiently to form an alloy junction. In the Figure a piece of N-type silicon or germanium is in ohmic contact with a lead 2 sealed through on glass housing 3 and a wire 5 with an electrolytically tapered aluminium point is sealed through a glass bead 6 and has its point bearing against the semi-conductor material 1. A short pulse of current produced by 8 is passed through the device and melts the aluminium tip and so forms an alloyed P-N junction with 1. The process may be carried out in air or preferably in an inert atmosphere. The glass bead 6 may be sealed to the housing 3.</p>
申请公布号 GB816170(A) 申请公布日期 1959.07.08
申请号 GB19570032479 申请日期 1957.10.17
申请人 COMPAGNIE FRANCAISE THOMSON-HOUSTON 发明人
分类号 G01R31/26;H01L21/00;H01L21/18;H01L21/48;H01L29/00 主分类号 G01R31/26
代理机构 代理人
主权项
地址