Improvements in silicon semiconductive devices

摘要

Semiconductor control devices comprise a high purity silicon monocrystalline body impregnated with traces of high purity manganese in amount of 1014 to 1015 atoms of manganese per c.c. of silicon. A monocrystalline ingot may be grown by seed crystal withdrawal from a melt of silicon containing 0.2 to 2.0% by weight of manganese.