| 摘要 |
<p>A process for purifying Si comprising (I) obtaining a silicon fibre, ribbon or silicon microplate in which one dimension thereof is less than 75 microns; (II) oxidising said fibre, ribbon or microplate to provide a silicon dioxide skin thereon; (III) annealing said silicon dioxide coated fibre, ribbon or microplate; (IV) etching the silicon dioxide skin; and optionally repeating steps (II) to (IV) above.</p> |
