发明名称 Method for patterning crystalline indium tin oxide using femtosecond laser
摘要 A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystalline ITO layer by emitting a femtosecond laser beam to the amorphous ITO layer in the predetermined area; and (c) removing the amorphous ITO layer on the substrate using an etching solution.
申请公布号 US7994029(B2) 申请公布日期 2011.08.09
申请号 US20090358046 申请日期 2009.01.22
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 CHENG CHUNG-WEI;GRIGOROPOULOS COSTAS P.;HWANG DAVID JEN;KIM MOOSUNG
分类号 H01L21/20;H01L21/36;H01L21/44 主分类号 H01L21/20
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