发明名称 |
Method for patterning crystalline indium tin oxide using femtosecond laser |
摘要 |
A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystalline ITO layer by emitting a femtosecond laser beam to the amorphous ITO layer in the predetermined area; and (c) removing the amorphous ITO layer on the substrate using an etching solution.
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申请公布号 |
US7994029(B2) |
申请公布日期 |
2011.08.09 |
申请号 |
US20090358046 |
申请日期 |
2009.01.22 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
CHENG CHUNG-WEI;GRIGOROPOULOS COSTAS P.;HWANG DAVID JEN;KIM MOOSUNG |
分类号 |
H01L21/20;H01L21/36;H01L21/44 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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