发明名称 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus which places a plurality of substrates in a plurality of concave portions respectively, the concave portions being arranged in a peripheral direction on a turntable provided in a vacuum chamber and which causes the substrates to sequentially pass a reactant gas supply position by turning the turntable and deposits thin films on the substrates, the film deposition apparatus preventing the substrates from jumping out of the turntable due to pressure difference in regions which the substrates pass. SOLUTION: A ring member formed like a ring along a peripheral direction of the substrate at a peripheral edge of the substrate placing region is fixed to an ascending/descending pin freely ascending/descending through the turntable. After the substrate is conveyed into the concave portion, the ascending/descending pin is caused to descend to place the ring member in a position being in contact with a peripheral edge portion of a surface of the substrate or slightly above this position, whereby the ring member locks the substrate when it is going to float upward and prevents the substrate from jumping out. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011151387(A) 申请公布日期 2011.08.04
申请号 JP20100286514 申请日期 2010.12.22
申请人 TOKYO ELECTRON LTD 发明人 OIZUMI YUKIO;HONMA MANABU
分类号 H01L21/31;B65G49/07;C23C16/458;H01L21/677 主分类号 H01L21/31
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