| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a leakage current and parasitic resistance by suppressing diffusion of metallic elements from a silicide layer while keeping interface resistance between the silicide layer and a silicon low. <P>SOLUTION: A semiconductor device 100 includes: a substrate 1 (semiconductor layer); a semiconductor electrode 10 which is formed contacting to the substrate 1 and has reverse conductive type to the substrate 1; the silicide layer 14 formed on the semiconductor electrode 10 while contacting to the semiconductor electrode 10; and a gettering layer 12 which is formed while separated from the junction between the substrate 1 and the semiconductor electrode 10 and from the silicide layer 14, respectively, inside the gettering layer 12, for gettering the metallic elements contained in the silicide layer 14. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
