| 摘要 |
PROBLEM TO BE SOLVED: To reduce the difference of a characteristic when forming a transistor of a trench gate structure where the number of trench is one along with a transistor of a trench gate structure where the number of trenches is two or more on a substrate. SOLUTION: This semiconductor device 100 includes: a first transistor 200 of n=1 and a second transistor 202 of n=2 or more each of which is a transistor having n trench(es) 162 each formed so that the depth discontinuously changes in a gate width direction; and an element isolation insulation film 110 formed around regions where the respective transistors are formed and isolating the regions where the transistors are formed. In this case, the distance c<SB>x</SB>between the single trench 162 in the gate width direction of the first transistor 200 and the element isolation insulation film 110 is smaller than the distance a<SB>x</SB>between the trenches 162 in the gate width direction of the second transistor 202. COPYRIGHT: (C)2011,JPO&INPIT |
