| 摘要 |
PURPOSE: A method for controlling temperature, method for obtaining a temperature correction value, a method for controlling a semiconductor device, and apparatus for processing a substrate are provided to at least correspond the temperature of an heat treatment with target temperature by efficiently using the temperature detected from the detection means and preparing a detection means which has over the number of partitions. CONSTITUTION: A target temperature is given with a temperature gradient corresponding to a zone in a heat treating furnace(1) in which a heat treatment area(9) is classified into a plurality of zones and a plurality of heaters(20a,20b,20c) is controlled according to the target temperature. A heat interference matrix, which shows correlation with the temperature detected from a plurality of profile temperature sensors(5) in the heat treating furnace and the amount of power supply to the heater, is obtained. A virtual temperature is produced based on the weighting factor, calculated from the heat interference matrix, and the detection temperature from a profile temperature sensor. A heater is controlled so that the virtual temperature corresponds to the target temperature.
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