发明名称 DIELECTRIC LAYER FOR FLASH MEMORY DEVICE, AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a dielectric layer formed of a rare earth aluminate having a perovskite structure. SOLUTION: The application relates to a dielectric layer containing a rare-earth aluminate (RE<SB>x</SB>Al<SB>2-x</SB>O<SB>3</SB>, wherein 0<x<2) and having a perovskite crystalline structure, wherein the rare-earth aluminate contains a rare-earth element having an atomic number 63 to 71. The application also relates to a dielectric stack containing the rare-earth aluminate dielectric layer and further contains a template stack comprising at least an upper template layer 104, and a method of manufacturing the dielectric stack, wherein the upper template layer 104 has a perovskite structure, and wherein the upper template layer 104 underlies and contacts the rare-earth aluminate dielectric layer 105. In a preferred embodiment, the dielectric stack further includes a lower template layer 103 having a crystalline structure, wherein the lower template layer 103 underlies and contacts the upper template layer 104. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011146699(A) 申请公布日期 2011.07.28
申请号 JP20100281145 申请日期 2010.12.17
申请人 IMEC 发明人 ADELMANN CHRISTOPH;SWERTS JOHAN;VAN ELSHOCHT SVEN;KITTL JORGE
分类号 H01L21/316;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/316
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