METHOD FOR FORMING DEEP ISOLATION IN IMAGERS

摘要

An image sensor (800) having an imaging area that includes a substrate layer (806) and a plurality of pixels formed therein. Multiple pixels each include a photodetector (801) formed in the substrate layer and deep isolation regions (803). Isolation layers (804a, 804b, 804c, 804d) are formed in the substrate layer by performing a series of implants of one or more dopants of a first conductivity type into the substrate layer. Each isolation layer implant is performed with a different energy than the other isolation layer implants in the series and each implant implants the one or more dopants into the entire imaging area. The photodetectors are formed in the substrate layer by performing a series of implants of one or more dopants of a second conductivity type into each pixel in the substrate layer. Each photodetector implant (802a, 802b, 802c, 802d) is performed with a different energy than the other photodetector implants in the series.