| 摘要 |
PURPOSE: A method for forming a silicon structure using a xenon fluoride compound is provided to form a silicon trench of a high aspect ratio, thereby saving energy used for a process. CONSTITUTION: A silicon structure is formed by at least one mask. A first mask(110) is made by silicon and a membrane with a selectivity ratio. A first mask is made of oxynitride, A second mask(120) is made of a xenon fluoride compound or xenon fluoride. The xenon fluoride compound can be XeF2, XeF4, and XeF6. The xenon fluoride is formed by combining xenon fluoride compounds by discharging xenon and the xenon fluoride compound.
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