发明名称 |
PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD |
摘要 |
<p>A plasma processing apparatus 11 includes a reactant gas supply unit 13 for supplying a reactant gas for a plasma process into a processing chamber 12. The reactant gas supply unit 13 includes a first reactant gas supply unit 61 provided at a center of a dielectric plate 16 and configured to supply the reactant gas in a directly downward direction toward a central region of a processing target substrate W held on a holding table 14; and a second reactant gas supply unit 62 provided at a position directly above the holding table 14 but not directly above the processing target substrate W held on the holding table 14 and configured to supply the reactant gas toward a center of the processing target substrate W held on the holding table 14.</p> |
申请公布号 |
KR20110081296(A) |
申请公布日期 |
2011.07.13 |
申请号 |
KR20117011259 |
申请日期 |
2009.08.25 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
OKAYAMA NOBUYUKI;MATSUMOTO NAOKI |
分类号 |
H01L21/3065;C23C16/455;H01L21/205;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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