| 摘要 |
Testing is performed on an amplifier wafer housing a transimpedance amplifier prior to packaging the transimpedance amplifier with an external photodetector, wherein the transimpedance amplifier includes a small, auxiliary, integrated silicon photodetector provided at the input of the transimpedance, in parallel with external photodetector attachment points. To test the transimpedance amplifier, the transimpedance amplifier is stimulated by optically exciting the small auxiliary photodetector, wherein the small auxiliary photodetector is excited using short wavelength light, whereby advantages such as higher efficiency may be obtained. The testing method includes placing the amplifier wafer in a testing system, probing the power and ground connections on the amplifier wafer, illuminating the small auxiliary photodetector on the amplifier wafer, and detecting the output of the transimpedance amplifier housed on the amplifier wafer.
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