发明名称 Electrostatic discharge protection circuitry
摘要 An integrated circuit has pins to which electrostatic discharge voltages may be delivered during electrostatic discharge events. Circuitry in the integrated circuit can be protected from damage by the electrostatic discharge voltages by electrostatic discharge protection circuitry. The electrostatic discharge protection circuitry may include one or more diodes that are connected between a given pin and ground to discharge negative electrostatic discharge voltages. Positive electrostatic discharge voltages may be discharged using a transistor that is connected between the pin and ground and that breaks down at a breakdown voltage. A voltage blocking circuit such as a circuit based on a voltage blocking transistor may be used to prevent damaging electrostatic discharge voltages from reaching sensitive circuitry. Pull down circuitry may be used to help ensure that the circuitry is protected from damage during electrostatic discharge events.
申请公布号 US7978450(B1) 申请公布日期 2011.07.12
申请号 US20080052718 申请日期 2008.03.20
申请人 ALTERA CORPORATION 发明人 PERISETTY SRINIVAS
分类号 H02H9/00;H01C7/12;H02H1/00;H02H1/04;H02H3/22;H02H9/06 主分类号 H02H9/00
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