| 摘要 |
PURPOSE: An image sensor and an image sensor manufacturing method are provided to stabilize an optical path and to prevent an optical interference phenomenon by forming an ion implanting domain, functioned as an optical shield layer, in a dual structure. CONSTITUTION: A photo diode(114) and the first element isolation film(112) are formed in a semiconductor substrate(110) and an ion implanting domain(116) is formed in the semiconductor substrate with a predetermined depth. The first insulation layer including a metal wiring is formed on the semiconductor substrate. The semiconductor substrate and the first insulation layer overturn. The second insulation layer is formed in a bottom of the first insulation layer. The second photoresist pattern opening the second insulation layer domain is formed on the second insulation layer. A trench is formed in the second insulation layer by an etching process and the second photoresist pattern is removed.
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