PHOTOMASK CAPABLE OF IMPROVING NONUNIFORMITY OF PATTERN CD

摘要

PURPOSE: A photo mask is provided to prevent the non-uniformity of a pattern CD(Critical Dimension) due to the difference of pattern density difference between the outside and the center in which patterns are densely arranged by arranging an auxiliary pattern below a limit resolution of an exposing device on the outside of the photo mask corresponding to a cell array area. CONSTITUTION: A mask substrate area(300) corresponds to a cell array area of the semiconductor substrate. A plurality of main patterns(310) of a line/space type are arranged on the mask substrate area. An SRAF(Sub Resolution Assist Feature)(320) is arranged on the outside of the mask substrate area in the same direction of the main pattern.