INTEGRATED TRENCH GUARDED SCHOTTKY DIODE COMPATIBLE WITH POWERDIE, STRUCTURE AND METHOD

摘要

PURPOSE: An integrated trench guarded Schottky diode compatible with a power die, a structure and a method is provided to reduce holes within a PMOS device or electrons within an NMOS device. CONSTITUTION: A semiconductor device(10) includes a trench guarded Schottky diode which can be a low side FET circuit(16). Co-package dies include the first IC die with a control circuit(12). The control circuit includes MOSFETs. The second MOSFET includes a high side FET(14) and a low side FET on a single semiconductor die. The high side FET is electrically connected to a VIN pin-out while a device is being operated. The low side FET is electrically connected to a power ground pin-out while the device is being operated. The interlink between the high side FET and the low side FET can be called half bridge.