| 摘要 |
<p>PURPOSE: A method for manufacturing an alternative phase shift mask is provided to accurately implement a phase difference of 180 degrees by finishing an etch process when a transmissivity rapidly increases with an etch stop layer. CONSTITUTION: A light transmission area is limited by forming a light shielding layer pattern(320) on a light transmitting substrate(310). An etch stop layer is formed in the transmissive substrate of the phase shift area among the light transmission area. The light shielding layer pattern covers the light transmitting substrate in an area except for a dummy pattern area(230). The light transmitting substrate of the phase shift area is etched by using the etch stop layer. An etch stop detecting device(700) receives a signal which passes through a low light transmitting area.</p> |
