| 摘要 |
PURPOSE: A method for depositing an insulation film of a semiconductor device is provided to suppress active attack phenomenon of a bottom film, by depositing the insulation film through two steps of bias power and gas condition as using a conventional HDPCVD. CONSTITUTION: A first step uses low power and low gas condition. A second step uses high power and low gas condition. Bias power of the low power condition is 300~1000W. The quantity of SiH4 of the low gas condition is 20~40SCCM. The deposition of an insulation film is completed. Active attack phenomenon of a bottom(10) is prevented. An insulation film(30a) is deposited on the bottom region of a trench. The bias power of the high power condition is 2500~4000W. The quantity of SiH4 of the low gas condition is 30~60SCCM.
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