发明名称 |
Source/drain strained layers |
摘要 |
A semiconductor device and method of manufacture thereof wherein a PMOS source/drain region of a transistor within the substrate includes a first strained layer in the PMOS source/drain region and a first capping layer in contact with the first strained layer. Further, the semiconductor device and method provide for an NMOS source/drain region of a transistor within the substrate including a second strained layer in the NMOS source/drain region and a second capping layer in contact with the second strained layer.
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申请公布号 |
US7973337(B2) |
申请公布日期 |
2011.07.05 |
申请号 |
US20100844896 |
申请日期 |
2010.07.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU MING-HUA;YEH LING-YEN;LEE TZE-LIANG |
分类号 |
H01L31/0328 |
主分类号 |
H01L31/0328 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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