| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device with high reliability that has a plurality of insulating films and a plurality of electrode films laminated alternately. SOLUTION: The nonvolatile semiconductor memory device is provided with a memory laminate in a memory array region and with a dummy laminate in a peripheral circuit region, wherein dummy holes 31a and 31b are formed in the dummy laminate, and insulating members are buried therein. A plurality of contacts 35a, 35b, 35c, 35d and 35e are formed in the insulating members. The contacts 35a and 35b are connected to a source layer 36 of an MOSFET 40, the contacts 35c and 35d are connected to a drain layer 37, and the contact 35e is connected to a gate electrode 38. The same potential is applied to a plurality of contacts disposed in one dummy hole or the plurality of contacts are disposed at positions off center lines 41a, 41c, 41d, 41f, 41h, 41j, 41k and 41l extending along the length of the dummy hole. COPYRIGHT: (C)2011,JPO&INPIT |
