| 摘要 |
PROBLEM TO BE SOLVED: To provide an Al-based sputtering target capable of dissolving problems (increase of the number of splashes, rise of electric resistance of deposited thin film) occurring on the initial stage of sputtering and shortening pre-sputtering time. SOLUTION: In the Al-based sputtering target, a sputtering surface has an arithmetic average roughness Ra of 1.50μm or less and the maximum height Rz of 10μm or less, wherein, when peak heights in which the height from the center line in the roughness curve to the crest or the valley exceeds (0.25×Rz) are defined as P or Q respectively and P and Q are successively counted over the reference length 100 mm, the average interval L between P and Q appearing just after P and between the Q and P appearing just after the Q is 0.4 mm or more. COPYRIGHT: (C)2011,JPO&INPIT
|
