发明名称 THIN FILM TRANSISTOR SUBSTRATE
摘要 A thin film transistor substrate including a thin film transistor having a drain electrode with an electrode portion, which overlaps with a semiconductor layer, and an extended portion, which extends from the electrode portion and has a portion overlapping with a storage electrode or storage electrode line. A passivation layer is arranged on the drain electrode, and it has a contact hole that partially exposes the extended portion of the drain electrode without exposing a step in the extended portion caused by the storage electrode or storage electrode line. A pixel electrode is arranged on the passivation layer and is electrically connected with the extended portion of the drain electrode through the contact hole.
申请公布号 US2011156037(A1) 申请公布日期 2011.06.30
申请号 US201113043267 申请日期 2011.03.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HYUK-JIN;KIM KYUNG-WOOK
分类号 H01L29/04 主分类号 H01L29/04
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