发明名称 Method of plasma load impedance tuning by modulation of an unmatched low power RF generator
摘要 A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance.
申请公布号 US7967944(B2) 申请公布日期 2011.06.28
申请号 US20080129244 申请日期 2008.05.29
申请人 APPLIED MATERIALS, INC. 发明人 SHANNON STEVEN C.;RAMASWAMY KARTIK;HOFFMAN DANIEL J.;MILLER MATTHEW L.;COLLINS KENNETH S.
分类号 C23F1/00 主分类号 C23F1/00
代理机构 代理人
主权项
地址