发明名称 SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING GENERATION OF CRACKS IN SEMICONDUCTOR CHIP DURING MANUFACTURING PROCESS
摘要 A semiconductor device includes a chip stacked body where a plurality of semiconductor chips are stacked, and penetration electrodes respectively formed in the semiconductor chips are electrically interconnected in stacking order of the semiconductor chips, a first support member that is disposed to face a first semiconductor chip formed in one end of the chip stacked body, and including electrodes electrically connected to the penetration electrodes of the first semiconductor chip, and a wiring board that is disposed to face a second semiconductor chip formed in an end opposed to the one end of the chip stacked body, and including external electrodes on a surface opposed to a surface facing the second semiconductor chip that is to be electrically connected to the penetration electrodes of the second semiconductor chip.
申请公布号 US2011147945(A1) 申请公布日期 2011.06.23
申请号 US20100969909 申请日期 2010.12.16
申请人 ELPIDA MEMORY, INC. 发明人 YOSHIDA MASANORI;TSUJI DAISUKE;YAMATO MASAHITO;SASAKI JUN;SONOBE KAORU;IDE AKIRA;YAMAGUCHI MASAHIRO
分类号 H01L23/52 主分类号 H01L23/52
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