INTEGRATED CIRCUIT WITH ELECTROSTATICALLY COUPLED MOS TRANSISTORS AND METHOD FOR PRODUCING SUCH AN INTEGRATED CIRCUIT

摘要

An integrated circuit including: a first transistor; a second transistor, arranged on the first transistor, whereof a channel region is formed in a semiconductor layer including two approximately parallel primary faces; a portion of an electrically conductive material electrically connected to a gate of the first transistor and arranged between the gate of the first transistor and the channel region of the second transistor; a dielectric layer arranged between the portion of the electrically conductive material and the channel region of the second transistor; and in which the section of the channel region of the second transistor is included in the section of the portion of the electrically conductive material, and the channel region of the second transistor is arranged between the portion of the electrically conductive material and a gate of the second transistor.